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參數(shù)資料
| 型號： | 2SK2625 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Switching Applications |
| 中文描述： | 超高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 27K |
| 代理商： | 2SK2625 |
2SK2625LS
No.7081-1/4
Features
Low ON-resistance.
Low Qg.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
Conditions
Ratings
Unit
V
V
A
A
W
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
600
±
30
4
16
2.0
30
150
Allowable Power Dissipation
PD
Tc=25
°
C
Channel Temperature
Storage Temperature
Tch
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K2625
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
ID=1mA, VGS=0
VDS=600V, VGS=0
VGS=
±
30V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=2.5A
ID=2.5A, VGS=15V
600
V
1.0
mA
nA
V
S
±
100
5.5
3.5
1.5
3.0
1.5
2.0
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7081
2SK2625LS
Package Dimensions
unit : mm
2078C
[2SK2625LS]
O2501 TS IM TA-3475
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
1
1
3
3
7
1
0.7
2.55
2.55
2
1.2
0.9
0.75
0
1.2
4.5
2.8
1
2
3
10.0
3.2
Preliminary
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2625LS | Ultrahigh-Speed Switching Applications |
| 2SK2627 | Ultrahigh-Speed Switching Applications |
| 2SK2631 | Ultrahigh-Speed Switching Applications |
| 2SK2684 | Silicon N Channel DV-L MOS FET(N溝道 DV-L MOSFET) |
| 2SK2684L | Silicon N Channel DV-L MOS FET(N溝道 DV-L MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2625ALS | 功能描述:MOSFET N-CH 600V 5A TO-220FI RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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| 2SK2632LS | 功能描述:MOSFET N-CH 800V 2.5A TO-220FI RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK2638-01MRSC | 制造商:Fuji Electric 功能描述: |
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